Molecular-beam epitaxy of p-type m-plane GaN

Effects of hydrogen during molecular beam epitaxy of GaN

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

The reconstruction and surface morphology of gallium nitride (0001) and (000 ) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.

Growth of GaN on porous SiC by molecular beam epitaxy

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 10 cm for edge dislocations and 1 10 cm for screw dislocations are achieved in GaN films of 1 m thickness grown under optimal conditions. Reve...

Magnesium incorporation in GaN grown by molecular-beam epitaxy

A pronounced dependence of Mg incorporation on surface polarity was observed in a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted molecular-beam epitaxy. Incorporation was studied for both ~0001!, or Ga-polarity and (0001̄) or N-polarity orientations. Up to a factor of 30 times more Mg was incorporated in Ga-polarity layers under certain conditions, as determined by seco...